Nucleation of oxides during dry oxidation of Si(001)-2 × 1 studied by scanning tunneling microscopy

Hideaki Togashi, Hidehito Asaoka, Tatsuya Yamazaki, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Morphological development of oxide islands on Si(001)-2 × 1 surfaces during the initial stage of dry oxidation has been studied using scanning tunneling microscopy. The oxidation was conducted at a substrate temperature of 560°C under an oxygen pressure of 6.7 × 10-5 Pa. The initial oxide islands grow one-dimensionally until the number of oxygen atoms within an island reaches four, at which point the growth is converted into a two-dimensional growth mode.

Original languageEnglish
Pages (from-to)L1377-L1380
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number42-45
DOIs
Publication statusPublished - 2005 Dec 1

Keywords

  • 1 surface
  • Autocatalytic reaction
  • Critical island size
  • Island growth
  • Nucleation
  • Scanning tunneling microscopy
  • Si dry oxidation
  • Si(001)-2 ×

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Nucleation of oxides during dry oxidation of Si(001)-2 × 1 studied by scanning tunneling microscopy'. Together they form a unique fingerprint.

Cite this