Nucleation control of silicon-germanium on silicon oxide for selective epitaxy and polysilicon formation in ultraclean low-pressure CVD

Manabu Kato, Chisato Iwasaki, Junichi Murota, Nobuo Mikoshiba, Shoichi Ono

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)

Abstract

Nucleation processes on Si oxide and epitaxial growth on Si for Si-Ge deposition have been investigated by ultraclean low-pressure CVD using SiH4 and GeH4 gases. It is found that, with GeH4 addition, the deposition rate on Si increases and the nucleation rate decreases, and the degree of nucleation strongly depends on the Si oxide material. High selective Si-Ge epitaxy has been realized between Si and Si oxide at temperatures as low as 550°C. Moreover, it is suggested that control of the grain size of the deposited polysilicon film on Si oxide is possible by the Si-Ge nuclei.

Original languageEnglish
Pages329-332
Number of pages4
DOIs
Publication statusPublished - 1990
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • Engineering(all)

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