Nucleation processes on Si oxide and epitaxial growth on Si for Si-Ge deposition have been investigated by ultraclean low-pressure CVD using SiH4 and GeH4 gases. It is found that, with GeH4 addition, the deposition rate on Si increases and the nucleation rate decreases, and the degree of nucleation strongly depends on the Si oxide material. High selective Si-Ge epitaxy has been realized between Si and Si oxide at temperatures as low as 550°C. Moreover, it is suggested that control of the grain size of the deposited polysilicon film on Si oxide is possible by the Si-Ge nuclei.
|Number of pages||4|
|Publication status||Published - 1990|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 1990 Aug 22 → 1990 Aug 24
|Other||22nd International Conference on Solid State Devices and Materials|
|Period||90/8/22 → 90/8/24|
ASJC Scopus subject areas