NUCLEATION CONTROL AND EPITAXIAL ALIGNMENT IN SILICON-ON-INSULATOR STRUCTURE DURING SOLID PHASE GROWTH.

M. Miyao, M. Moniwa, M. Ichikawa, A. Ishizaka, T. Doi, H. Sunami, T. Tokuyama

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Two possible solutions to the problem of nucleous growth encountered in lateral solid-phase epitaxial growth over insulating films are discussed. Driving force for preferential nucleation in amorphous-Si on SiO//2 films was found to be a stress field originating from the thermal expansion coefficient for Si and SiO//2. Utilization of underlying Si//3N//4 films successfully eliminated such nuclei growth. Additionally, high-temperature annealing ( greater than equivalent to 1000 C) crystallized poly-Si nuclei under lateral epitaxial alignment. Growth speed (v left bracket cm/s right bracket ) was estimated to be 1. 6 multiplied by 10**6 exp( minus 3. 9/kT left bracket ev right bracket ).

    Original languageEnglish
    Title of host publicationConference on Solid State Devices and Materials
    PublisherBusiness Cent for Academic Soc Japan
    Pages511-514
    Number of pages4
    ISBN (Print)4930813077, 9784930813077
    DOIs
    Publication statusPublished - 1984

    Publication series

    NameConference on Solid State Devices and Materials

    ASJC Scopus subject areas

    • Engineering(all)

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