Two possible solutions to the problem of nucleous growth encountered in lateral solid-phase epitaxial growth over insulating films are discussed. Driving force for preferential nucleation in amorphous-Si on SiO//2 films was found to be a stress field originating from the thermal expansion coefficient for Si and SiO//2. Utilization of underlying Si//3N//4 films successfully eliminated such nuclei growth. Additionally, high-temperature annealing ( greater than equivalent to 1000 C) crystallized poly-Si nuclei under lateral epitaxial alignment. Growth speed (v left bracket cm/s right bracket ) was estimated to be 1. 6 multiplied by 10**6 exp( minus 3. 9/kT left bracket ev right bracket ).