Nucleation and growth of vacuum-deposited tin on amorphous substrates having microscopic steps

T. Osaka, Y. Kasukabe

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

SiO was deposited onto UHV-cleaved KCl crystals in order to produce amorphous substrates having a step whose radii of curvature at the corner are smaller than 1 nm. Sn was then deposited from the vapor phase onto these substrates at 150°C. The resulting Sn particles were examined by high resolution TEM and electron diffraction. Particles in contact with the step walls grew over the steps and aligned graphoepitaxially in the following three orientations: (100), (101), or (001) planes which were parallel to the step terrace and the [010] direction which was perpendicular to the step wall. The radii of curvature of the stepped amorphous substrates were measured from TEM images. The results indicated that the vapor-deposited Sn nucleated in the liquid state at the corner of the steps of the SiO substrate and then aligned graphoepitaxially with the step walls and terraces, through the processes of solidification.

Original languageEnglish
Pages (from-to)10-20
Number of pages11
JournalJournal of Crystal Growth
Volume73
Issue number1
DOIs
Publication statusPublished - 1985 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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