Nuclear spin resonance induced by radio frequency electric field

N. Kumada, T. Kamada, Y. Hirayama, S. Miyashita, T. Fujisawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate electric-field-induced nuclear spin resonance mediated by the hyperfine field in a GaAs-based semiconductor. Radio frequency (RF) modulation of a gate bias causes oscillations of electron spins forming a domain structure and thereby oscillations of the hyperfine fields to nuclear spins. When the RF frequency corresponds to the nuclear resonance frequency of 69Ga, 71Ga or 75As, nuclear spins are depolarized and then detected by the change in the resistance of the electronic system.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages461-462
Number of pages2
DOIs
Publication statusPublished - 2009 Dec 1
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 2008 Jul 272008 Aug 1

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
CountryBrazil
CityRio de Janeiro
Period08/7/2708/8/1

Keywords

  • GaAs
  • Nuclear spin
  • Quantum hall system

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kumada, N., Kamada, T., Hirayama, Y., Miyashita, S., & Fujisawa, T. (2009). Nuclear spin resonance induced by radio frequency electric field. In Physics of Semiconductors - 29th International Conference, ICPS 29 (pp. 461-462). (AIP Conference Proceedings; Vol. 1199). https://doi.org/10.1063/1.3295506