n+-Polysilicon etching with both high anisotropy and high selectivity by nitrogen chemisorption in chlorine and nitrogen mixed ECR plasma

Takashi Matsuura; Hiroaki Uetake; Junichi Murota; Koichi Fukuda; Tadahiro Ohmi; Nobuo Mikoshiba

doi:10.7567/ssdm.1990.c-3-1

n⁺-Polysilicon etching with both high anisotropy and high selectivity by nitrogen chemisorption in chlorine and nitrogen mixed ECR plasma

Takashi Matsuura, Hiroaki Uetake, Junichi Murota, Koichi Fukuda, Tadahiro Ohmi, Nobuo Mikoshiba

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

n⁺-polysilicon etching with both, high anistropy and high selectivity, for ULSI fabrication has been realized by irradiating the chlorine and nitrogen mixed plasma under a low ion energy condition using an ultraclean ECR etcher. From XPS analysis, it is found that the high anisotropy is caused by the formation of Si-N bonds by N radicals on the shallow surface of n⁺-polysilicon. Based on the evaluation of the enthalpy change for reactions together with the added N₂ dependence of the etch rate, it has been proposed that etching in the N₂ added Cl₂ plasma can be analyzed as competitive reactions with an equation similar to Langumuir's adsorption isotherm.

Original language	English
Pages	199-202
Number of pages	4
DOIs	https://doi.org/10.7567/ssdm.1990.c-3-1
Publication status	Published - 1990
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 1990 Aug 22 → 1990 Aug 24

Other

Other	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	90/8/22 → 90/8/24

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.7567/ssdm.1990.c-3-1

Cite this

Matsuura, T., Uetake, H., Murota, J., Fukuda, K., Ohmi, T., & Mikoshiba, N. (1990). n⁺-Polysilicon etching with both high anisotropy and high selectivity by nitrogen chemisorption in chlorine and nitrogen mixed ECR plasma. 199-202. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn. https://doi.org/10.7567/ssdm.1990.c-3-1

n⁺-Polysilicon etching with both high anisotropy and high selectivity by nitrogen chemisorption in chlorine and nitrogen mixed ECR plasma. / Matsuura, Takashi; Uetake, Hiroaki; Murota, Junichi et al.

1990. 199-202 Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn.

Research output: Contribution to conference › Paper › peer-review

Matsuura, T, Uetake, H, Murota, J, Fukuda, K, Ohmi, T & Mikoshiba, N 1990, 'n⁺-Polysilicon etching with both high anisotropy and high selectivity by nitrogen chemisorption in chlorine and nitrogen mixed ECR plasma', Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, 90/8/22 - 90/8/24 pp. 199-202. https://doi.org/10.7567/ssdm.1990.c-3-1

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abstract = "n+-polysilicon etching with both, high anistropy and high selectivity, for ULSI fabrication has been realized by irradiating the chlorine and nitrogen mixed plasma under a low ion energy condition using an ultraclean ECR etcher. From XPS analysis, it is found that the high anisotropy is caused by the formation of Si-N bonds by N radicals on the shallow surface of n+-polysilicon. Based on the evaluation of the enthalpy change for reactions together with the added N2 dependence of the etch rate, it has been proposed that etching in the N2 added Cl2 plasma can be analyzed as competitive reactions with an equation similar to Langumuir's adsorption isotherm.",

author = "Takashi Matsuura and Hiroaki Uetake and Junichi Murota and Koichi Fukuda and Tadahiro Ohmi and Nobuo Mikoshiba",

year = "1990",

doi = "10.7567/ssdm.1990.c-3-1",

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AU - Matsuura, Takashi

AU - Uetake, Hiroaki

AU - Murota, Junichi

AU - Fukuda, Koichi

AU - Ohmi, Tadahiro

AU - Mikoshiba, Nobuo

PY - 1990

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AB - n+-polysilicon etching with both, high anistropy and high selectivity, for ULSI fabrication has been realized by irradiating the chlorine and nitrogen mixed plasma under a low ion energy condition using an ultraclean ECR etcher. From XPS analysis, it is found that the high anisotropy is caused by the formation of Si-N bonds by N radicals on the shallow surface of n+-polysilicon. Based on the evaluation of the enthalpy change for reactions together with the added N2 dependence of the etch rate, it has been proposed that etching in the N2 added Cl2 plasma can be analyzed as competitive reactions with an equation similar to Langumuir's adsorption isotherm.

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