n+-Polysilicon etching with both high anisotropy and high selectivity by nitrogen chemisorption in chlorine and nitrogen mixed ECR plasma

Takashi Matsuura, Hiroaki Uetake, Junichi Murota, Koichi Fukuda, Tadahiro Ohmi, Nobuo Mikoshiba

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

n+-polysilicon etching with both, high anistropy and high selectivity, for ULSI fabrication has been realized by irradiating the chlorine and nitrogen mixed plasma under a low ion energy condition using an ultraclean ECR etcher. From XPS analysis, it is found that the high anisotropy is caused by the formation of Si-N bonds by N radicals on the shallow surface of n+-polysilicon. Based on the evaluation of the enthalpy change for reactions together with the added N2 dependence of the etch rate, it has been proposed that etching in the N2 added Cl2 plasma can be analyzed as competitive reactions with an equation similar to Langumuir's adsorption isotherm.

Original languageEnglish
Pages199-202
Number of pages4
DOIs
Publication statusPublished - 1990
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'n<sup>+</sup>-Polysilicon etching with both high anisotropy and high selectivity by nitrogen chemisorption in chlorine and nitrogen mixed ECR plasma'. Together they form a unique fingerprint.

Cite this