NPN 30 GHz, 32 GHz fT complementary bipolar technology

Takahiro Onai, Eiji Ohue, Yohji Idei, Masamichi Tanabe, Hiromi Shimamoto, Katsuyoshi Washio, Tohru Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Fully symmetrical complementary bipolar transistors for low power-dissipation and ultra-high-speed LSIs have been integrated in the same chip using a 0.3-μm SPOTEC process. Reducing the surface concentration of the boron by oxidation at the surface of boron diffusion layer suppressed upward diffusion of boron in the subcollector of the pnp transistor during epitaxial growth. This enabled thin epitaxial layer growth of both npn and pnp transistors simultaneously. Cutoff frequencies of 30 and 32 GHz were obtained in npn and pnp transistors, respectively. These results showed that the power dissipation is reduced to 1/4 in a complementary active pull-down circuit compared with an ECL circuit.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages63-66
Number of pages4
ISBN (Print)0780314506
Publication statusPublished - 1993 Dec 1
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period93/12/593/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Onai, T., Ohue, E., Idei, Y., Tanabe, M., Shimamoto, H., Washio, K., & Nakamura, T. (1993). NPN 30 GHz, 32 GHz fT complementary bipolar technology. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 63-66). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.