Novel wide-emitter SiGe HBT technology for RF power applications

Katsuyoshi Washio, Hiromi Shimamoto, Makoto Miura, Katsuya Oda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel SiGe HBT, featuring emitter-width-tolerable DC and RF performance, for RF power applications is proposed. This transistor, with a bow-tie-shaped base structure, allows large tolerance for emitter widths from 0.2 to 0.75μm. Its validity for having nearly constant high-frequency performance, in terms of cutoff frequency and maximum oscillation frequency of about 100 GHz, and low base resistance, even with a wide emitter, is confirmed.

Original languageEnglish
Title of host publicationESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages103-106
Number of pages4
ISBN (Print)9781424423644
DOIs
Publication statusPublished - 2008 Jan 1
Externally publishedYes
EventESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom
Duration: 2008 Sep 152008 Sep 19

Publication series

NameESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

OtherESSDERC 2008 - 38th European Solid-State Device Research Conference
CountryUnited Kingdom
CityEdinburgh, Scotland
Period08/9/1508/9/19

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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