Novel wide-emitter SiGe HBT technology for RF power applications

Katsuyoshi Washio; Hiromi Shimamoto; Makoto Miura; Katsuya Oda

doi:10.1109/ESSDERC.2008.4681709

Novel wide-emitter SiGe HBT technology for RF power applications

Katsuyoshi Washio, Hiromi Shimamoto, Makoto Miura, Katsuya Oda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel SiGe HBT, featuring emitter-width-tolerable DC and RF performance, for RF power applications is proposed. This transistor, with a bow-tie-shaped base structure, allows large tolerance for emitter widths from 0.2 to 0.75μm. Its validity for having nearly constant high-frequency performance, in terms of cutoff frequency and maximum oscillation frequency of about 100 GHz, and low base resistance, even with a wide emitter, is confirmed.

Original language	English
Title of host publication	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	103-106
Number of pages	4
ISBN (Print)	9781424423644
DOIs	https://doi.org/10.1109/ESSDERC.2008.4681709
Publication status	Published - 2008 Jan 1
Externally published	Yes
Event	ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom Duration: 2008 Sep 15 → 2008 Sep 19

Publication series

Name	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

Other	ESSDERC 2008 - 38th European Solid-State Device Research Conference
Country	United Kingdom
City	Edinburgh, Scotland
Period	08/9/15 → 08/9/19

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ESSDERC.2008.4681709

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Cite this

Washio, K., Shimamoto, H., Miura, M., & Oda, K. (2008). Novel wide-emitter SiGe HBT technology for RF power applications. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference (pp. 103-106). [4681709] (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2008.4681709

Novel wide-emitter SiGe HBT technology for RF power applications. / Washio, Katsuyoshi; Shimamoto, Hiromi; Miura, Makoto; Oda, Katsuya.

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. p. 103-106 4681709 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Washio, K, Shimamoto, H, Miura, M & Oda, K 2008, Novel wide-emitter SiGe HBT technology for RF power applications. in ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference., 4681709, ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference, IEEE Computer Society, pp. 103-106, ESSDERC 2008 - 38th European Solid-State Device Research Conference, Edinburgh, Scotland, United Kingdom, 08/9/15. https://doi.org/10.1109/ESSDERC.2008.4681709

Washio K, Shimamoto H, Miura M, Oda K. Novel wide-emitter SiGe HBT technology for RF power applications. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society. 2008. p. 103-106. 4681709. (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2008.4681709

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