TY - GEN
T1 - Novel wide-emitter SiGe HBT technology for RF power applications
AU - Washio, Katsuyoshi
AU - Shimamoto, Hiromi
AU - Miura, Makoto
AU - Oda, Katsuya
PY - 2008/1/1
Y1 - 2008/1/1
N2 - A novel SiGe HBT, featuring emitter-width-tolerable DC and RF performance, for RF power applications is proposed. This transistor, with a bow-tie-shaped base structure, allows large tolerance for emitter widths from 0.2 to 0.75μm. Its validity for having nearly constant high-frequency performance, in terms of cutoff frequency and maximum oscillation frequency of about 100 GHz, and low base resistance, even with a wide emitter, is confirmed.
AB - A novel SiGe HBT, featuring emitter-width-tolerable DC and RF performance, for RF power applications is proposed. This transistor, with a bow-tie-shaped base structure, allows large tolerance for emitter widths from 0.2 to 0.75μm. Its validity for having nearly constant high-frequency performance, in terms of cutoff frequency and maximum oscillation frequency of about 100 GHz, and low base resistance, even with a wide emitter, is confirmed.
UR - http://www.scopus.com/inward/record.url?scp=58049083525&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=58049083525&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2008.4681709
DO - 10.1109/ESSDERC.2008.4681709
M3 - Conference contribution
AN - SCOPUS:58049083525
SN - 9781424423644
T3 - ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
SP - 103
EP - 106
BT - ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PB - IEEE Computer Society
T2 - ESSDERC 2008 - 38th European Solid-State Device Research Conference
Y2 - 15 September 2008 through 19 September 2008
ER -