Novel wide band gap alloyed semiconductors, x(LiGaO2) 1/2-(1-x)ZnO, and fabrication of their thin films

T. Omata, K. Tanaka, A. Tazuke, K. Nose, S. Otsuka-Yao-Matsuo

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Oxide semiconductor alloys of x(LiGaO2)1/2-(1-x)ZnO were fabricated by the solid state reaction between β-LiGaO2 and ZnO and rf-magnetron sputtering. For the solid state reaction, the wurtzite-type single phases were obtained in the composition range of x0.38. The formation range of the alloys was wider than that of the (Mg1-x Zn x )O system, because the β-LiGaO2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The electrical resistivity and energy band gap of the 0.38(LiGaO 2)1/2-0.62ZnO alloyed ceramic were 0.45 Ωcm and 3.7 eV, respectively, at room temperature. For the alloying by sputtering, the films consisting of the wurtzite-type single phase were obtained over the entire composition range of x(LiGaO2)1/2-(1-x)ZnO. The energy band gap was controllable in the range from 3.3 to 5.6 eV. For the as-deposited film fabricated using the 0.4(LiGaO2)1/2-0.6ZnO alloyed ceramic target, the energy band gap was 3.74 eV, and the electrical resistivity, carrier density and the Hall mobility at room temperature were 3.6 Ωcm, 3.4×1017 cm-3 and 5.6 cm2 V-1 s-1, respectively.

Original languageEnglish
Pages (from-to)111-115
Number of pages5
JournalScience in China, Series E: Technological Sciences
Issue number1
Publication statusPublished - 2009 Jan
Externally publishedYes


  • Band gap engineering
  • Oxide electronics
  • Transparent conductor
  • Ultraviolet light
  • Zinc oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)


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