Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels

Y. Morita, T. Maeda, H. Ota, W. Mizubayashi, S. O'Uchi, M. Masahara, T. Matsukawa, K. Endo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have developed a novel wafer-scale uniform layer-by-layer etching technology based on the etching reaction of oxygen molecules with Ge surfaces. The advantages of this etching technology are as follows. (1) Layer-by-layer etching can be achieved, yielding an atomically flat step-terrace surface. (2) Because of the very small activation energy (<0.1 eV) of the etching reaction, this technology is free from etch rate variation caused by temperature inhomogeneity over large wafers. (3) No plasma damage occurs as a result of O2 molecule reactions with anisotropic etching. These features are applicable to the fabrication of three-dimensional Ge channels.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15.3.1-15.3.4
ISBN (Electronic)9781467398930
DOIs
Publication statusPublished - 2015 Feb 16
Externally publishedYes
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 2015 Dec 72015 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period15/12/715/12/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Morita, Y., Maeda, T., Ota, H., Mizubayashi, W., O'Uchi, S., Masahara, M., Matsukawa, T., & Endo, K. (2015). Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 15.3.1-15.3.4). [7409703] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409703