Low-temperature ultrasonic measurements were employed for observation of isolated vacancies in crystalline silicon. The elastic constants of FZ crystalline silicon revealed low-temperature softening below about 20 K down to base temperature 20 mK in present experiments. The softening of non-doped FZ silicon being free from applied magnetic filed indicates non-magnetic charge state V0 of vacancy. The disappearance of softening in boron-doped FZ silicon under applied magnetic fields up 2T means magnetic charge state V +. This novel ultrasonic tool succeeded in observation of low-temperature softening in perfect crystal region of non-doped CZ silicon ingot indicating distribution of isolated vacancies.
|Number of pages||8|
|Publication status||Published - 2007 Dec 1|
|Event||Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting - Washington, DC, United States|
Duration: 2007 Oct 7 → 2007 Oct 12
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