Abstract
Low-temperature ultrasonic measurements were employed for observation of isolated vacancies in crystalline silicon. The elastic constants of FZ crystalline silicon revealed low-temperature softening below about 20 K down to base temperature 20 mK in present experiments. The softening of non-doped FZ silicon being free from applied magnetic filed indicates non-magnetic charge state V0 of vacancy. The disappearance of softening in boron-doped FZ silicon under applied magnetic fields up 2T means magnetic charge state V +. This novel ultrasonic tool succeeded in observation of low-temperature softening in perfect crystal region of non-doped CZ silicon ingot indicating distribution of isolated vacancies.
Original language | English |
---|---|
Pages (from-to) | 187-194 |
Number of pages | 8 |
Journal | ECS Transactions |
Volume | 11 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2007 Dec 1 |
Event | Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 7 → 2007 Oct 12 |
ASJC Scopus subject areas
- Engineering(all)