Novel ultrasonic tool for vacancy observation in crystalline silicon

Terutaka Goto; Hiroshi Yamada-Kaneta; Masatoshi Hikin; Koji Sato; Yuichi Nemoto; Shintaro Nakamura

doi:10.1149/1.2778661

Novel ultrasonic tool for vacancy observation in crystalline silicon

Terutaka Goto, Hiroshi Yamada-Kaneta, Masatoshi Hikin, Koji Sato, Yuichi Nemoto, Shintaro Nakamura

Institute for Materials Research (IMR) (institute affiliation only)

Research output: Contribution to journal › Conference article › peer-review

Abstract

Low-temperature ultrasonic measurements were employed for observation of isolated vacancies in crystalline silicon. The elastic constants of FZ crystalline silicon revealed low-temperature softening below about 20 K down to base temperature 20 mK in present experiments. The softening of non-doped FZ silicon being free from applied magnetic filed indicates non-magnetic charge state V⁰ of vacancy. The disappearance of softening in boron-doped FZ silicon under applied magnetic fields up 2T means magnetic charge state V ⁺. This novel ultrasonic tool succeeded in observation of low-temperature softening in perfect crystal region of non-doped CZ silicon ingot indicating distribution of isolated vacancies.

Original language	English
Pages (from-to)	187-194
Number of pages	8
Journal	ECS Transactions
Volume	11
Issue number	3
DOIs	https://doi.org/10.1149/1.2778661
Publication status	Published - 2007 Dec 1
Event	Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 7 → 2007 Oct 12

ASJC Scopus subject areas

Engineering(all)

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title = "Novel ultrasonic tool for vacancy observation in crystalline silicon",

abstract = "Low-temperature ultrasonic measurements were employed for observation of isolated vacancies in crystalline silicon. The elastic constants of FZ crystalline silicon revealed low-temperature softening below about 20 K down to base temperature 20 mK in present experiments. The softening of non-doped FZ silicon being free from applied magnetic filed indicates non-magnetic charge state V0 of vacancy. The disappearance of softening in boron-doped FZ silicon under applied magnetic fields up 2T means magnetic charge state V +. This novel ultrasonic tool succeeded in observation of low-temperature softening in perfect crystal region of non-doped CZ silicon ingot indicating distribution of isolated vacancies.",

author = "Terutaka Goto and Hiroshi Yamada-Kaneta and Masatoshi Hikin and Koji Sato and Yuichi Nemoto and Shintaro Nakamura",

year = "2007",

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language = "English",

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journal = "ECS Transactions",

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TY - JOUR

T1 - Novel ultrasonic tool for vacancy observation in crystalline silicon

AU - Goto, Terutaka

AU - Yamada-Kaneta, Hiroshi

AU - Hikin, Masatoshi

AU - Sato, Koji

AU - Nemoto, Yuichi

AU - Nakamura, Shintaro

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Low-temperature ultrasonic measurements were employed for observation of isolated vacancies in crystalline silicon. The elastic constants of FZ crystalline silicon revealed low-temperature softening below about 20 K down to base temperature 20 mK in present experiments. The softening of non-doped FZ silicon being free from applied magnetic filed indicates non-magnetic charge state V0 of vacancy. The disappearance of softening in boron-doped FZ silicon under applied magnetic fields up 2T means magnetic charge state V +. This novel ultrasonic tool succeeded in observation of low-temperature softening in perfect crystal region of non-doped CZ silicon ingot indicating distribution of isolated vacancies.

AB - Low-temperature ultrasonic measurements were employed for observation of isolated vacancies in crystalline silicon. The elastic constants of FZ crystalline silicon revealed low-temperature softening below about 20 K down to base temperature 20 mK in present experiments. The softening of non-doped FZ silicon being free from applied magnetic filed indicates non-magnetic charge state V0 of vacancy. The disappearance of softening in boron-doped FZ silicon under applied magnetic fields up 2T means magnetic charge state V +. This novel ultrasonic tool succeeded in observation of low-temperature softening in perfect crystal region of non-doped CZ silicon ingot indicating distribution of isolated vacancies.

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T2 - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7 - 212th ECS Meeting

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