Abstract
In order to overcome the limitation of cell area of 4F2 per bit In conventional NAND Flash memory cells, stacked-surrounding gate transistor (S-SGT) structured cell is proposed. This newly structured cell achieves a cell area of 4F2 / N per bit, where N is the number of stacked memory cells in one silicon pillar, without using multibit per memory cell technology. The S-SGT structured cell consisting of two stacked memory cells in one silicon pillar achieves a cell area per bit of less than 50% of the smallest reported NAND structured cell. The novel S-SGT structured cells are fabricated by vertical self-aligned processes using a 0.2 μm design rule. The S-SGT structured cell can be programmed and erased by uniform injection and uniform emission of Fowler-Nordheim (F-N) tunneling electrons over the whole channel area of the memory cell, respectively, which is the same program and erase mechanism as in conventional NAND structured cell. This high performance S-SGT structured cell is applicable to high-density nonvolatile memories for 16 G/64 G bit Flash memories and beyond.
Original language | English |
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Pages (from-to) | 945-951 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 50 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2003 Apr |
Keywords
- 3-D device
- Flash memory
- S-SGT
- SGT
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering