Novel transparent conducting oxide: Anatase Ti1-xNb xO2

Yutaka Furubayashi, Taro Hitosugi, Yukio Yamamoto, Yasushi Hirose, Go Kinoda, Kazuhisa Inaba, Toshihiro Shimada, Tetsuya Hasegawa

    Research output: Contribution to journalConference articlepeer-review

    82 Citations (Scopus)


    Single-crystalline Ti1-xNbxO2 (x = 0.2) films of 40 nm thickness were deposited on SrTiO3 (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti 1-xNbxO2 films with x ≥ 0.03 is 2-3 × 10- 4 Ω cm at room temperature. The carrier density of Ti 1-xNbxO2, which is almost proportional to the Nb concentration, can be controlled in a range of 1 × 1019 to 2 × 1021 cm- 3. Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x = 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti1-xNbxO2 is one of the promising candidates for the practical TCOs.

    Original languageEnglish
    Pages (from-to)157-159
    Number of pages3
    JournalThin Solid Films
    Issue number1
    Publication statusPublished - 2006 Feb 1
    EventProceedings of the Fourth International Symposium on Transparent Oxide Thin Film for Electronics and Optics (TOEO-4) -
    Duration: 2005 Apr 72005 Apr 8


    • Anatase
    • Epitaxial film
    • Internal transmittance
    • Resistivity
    • Transparent conducting oxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry


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