Tiao Yuan Huang, William W. Yao, Russel A. Martin, Alan G. Lewis, Mitsumasa Koyanagi, John Y. Chen

Research output: Contribution to journalConference articlepeer-review

42 Citations (Scopus)


A novel submicrometer lightly doped drain (LDD) transistor with an inverse-T (IT) gate structure has been demonstrated. The structure provides self-alignments of n- LDD and n** plus source-drain implants to IT gate structure. The self-aligned n** plus -to-gate feature allows for a lower n- LDD dose and minimum postimplant drive-in on the optimized transistor. Improved transconductance and extrapolated lifetime of more than 10 years have been achieved for 0. 6- mu m ITLDD NMOS transistors. The ITLDD offers an excellent possible device structure for future CMOS processes in which minimum thermal processing is necessary for p-channel transistors.

Original languageEnglish
Pages (from-to)742-745
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1986 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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