TY - GEN
T1 - Novel Sputter Film Deposition to Fabricate Thick Films with Extremely Smooth Surface Suitable for Room Temperature Bonding
AU - Saito, T.
AU - Makita, H.
AU - Moriwaki, T.
AU - Suzuki, Y.
AU - Kato, N.
AU - Wakayanagi, S.
AU - Miura, A.
AU - Uomoto, M.
AU - Shimatsu, T.
PY - 2019/5
Y1 - 2019/5
N2 - SiO films were deposited on glass wafers using energy treatment sputtering (ETS). Surface roughness S of ETS-SiO film was 0.17 nm, which is remarkably smaller than that of films deposited using conventional sputtering (Sa=0.46 nm). Bonding using the extremely smooth surface was demonstrated.
AB - SiO films were deposited on glass wafers using energy treatment sputtering (ETS). Surface roughness S of ETS-SiO film was 0.17 nm, which is remarkably smaller than that of films deposited using conventional sputtering (Sa=0.46 nm). Bonding using the extremely smooth surface was demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=85068385325&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068385325&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735262
DO - 10.23919/LTB-3D.2019.8735262
M3 - Conference contribution
AN - SCOPUS:85068385325
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -