Novel silicon on insulator metal oxide semiconductor field effect transistors with buried back gate

Hyuckjae Oh, Hoon Choi, Takeshi Sakaguchi, Jeoung Chill Shim, Hiroyuki Kurino, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

One of the most promising ways of realizing metal oxide semiconductor field effect transistors (MOSFETs) with high speed and ultralow power consumption is by varying the threshold voltage of fully depleted silicon on insulator (FD-SOI) MOSFETs by changing back gate bias. We have studied FD-SOI MOSFETs with buried back gate by experiment and simulation in order to realize both high-performance and low-voltage ULSIs. It was confirmed that the back gate is very effective not only for increasing the ON current in the active mode but also for decreasing the cut-off current in the standby mode by controlling the threshold voltage.

Original languageEnglish
Pages (from-to)2140-2144
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - 2004 Apr

Keywords

  • Buried back gate
  • MOSFET
  • Silicon-on-insulator
  • Threshold voltage

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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