TY - GEN
T1 - Novel quantum effect devices realized by fusion of bio-template and defect-free neutral beam etching
AU - Samukawa, Seiji
PY - 2013/3/13
Y1 - 2013/3/13
N2 - An original top-down process involving a bio-template and damage-free neutral beam etching (NBE) has been developed to fabricate a high-quality nanodisk superlattice. The self-assemble ferritin 2D array (iron core diameter: 4.5 nm) acts as uniform etching mask and our developed neutral beam etching eliminates UV photons and high-energy charged particles to achieve a damage-free etching. As a result, we have fabricated a high-quality nanodisk superlattice with a high density (1.4 × 1012 cm-2), uniform size (Si nanodisk diameter: 6.4 nm), and well-ordered arrangement (hexagonal close packing). The Si nanodisk 2D array with SiC interlayer had an extremely high optical absorption coefficient and high carrier transport due to the formation of a wide miniband. This advanced nano-process brings high-efficiency quantum dot (QD) solar cell (SC).
AB - An original top-down process involving a bio-template and damage-free neutral beam etching (NBE) has been developed to fabricate a high-quality nanodisk superlattice. The self-assemble ferritin 2D array (iron core diameter: 4.5 nm) acts as uniform etching mask and our developed neutral beam etching eliminates UV photons and high-energy charged particles to achieve a damage-free etching. As a result, we have fabricated a high-quality nanodisk superlattice with a high density (1.4 × 1012 cm-2), uniform size (Si nanodisk diameter: 6.4 nm), and well-ordered arrangement (hexagonal close packing). The Si nanodisk 2D array with SiC interlayer had an extremely high optical absorption coefficient and high carrier transport due to the formation of a wide miniband. This advanced nano-process brings high-efficiency quantum dot (QD) solar cell (SC).
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U2 - 10.1109/INEC.2013.6466034
DO - 10.1109/INEC.2013.6466034
M3 - Conference contribution
AN - SCOPUS:84874783021
SN - 9781467348416
T3 - Proceedings - Winter Simulation Conference
SP - 316
EP - 317
BT - Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
T2 - 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Y2 - 2 January 2013 through 4 January 2013
ER -