Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm

K. Nishioka; H. Sato; T. Endoh; H. Honjo; S. Ikeda; T. Watanabe; S. Miura; H. Inoue; T. Tanigawa; Y. Noguchi; M. Yasuhira

doi:10.1109/TED.2020.2966731

Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm

K. Nishioka, H. Sato, T. Endoh, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

We have proposed a novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency defined as the ratio of Δ to intrinsic critical current IC0 ( Δ /IC0 ) by a factor of 1.5-2 compared with the conventional double-interface MTJ technology. The free layer of the developed quad interface consists of bottom-MgO/FL1/middle-MgO/FL2/top-MgO stack structure. We successfully fabricated the quad-interface MTJ using a 300-mm process based on a novel low-damage integration process including physical vapor deposition (PVD), reactive ion etching (RIE), and so on. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ /IC0 at the same time. Moreover, we have achieved about two times larger tunnel magnetoresistance (TMR) ratio at the same resistance area (RA) product by developing the FL1, bottom-MgO, and middle-MgO. The developed quad-interface MTJ technology considered as post-double-interface MTJ technology will become an essential technology for the scaling of the spin-transfer-torque magnetoresistive random access memory (STT-MRAM) beyond 20 nm.

Original language	English
Article number	8995801
Pages (from-to)	995-1000
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	3
DOIs	https://doi.org/10.1109/TED.2020.2966731
Publication status	Published - 2020 Mar

Keywords

Interfacial anisotropy type magnetic tunnel junction (MTJ)
quad interface
spin-transfer-torque magnetoresistive random access memory (STT-MRAM)
switching efficiency
thermal stability factor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Nishioka, K., Sato, H., Endoh, T., Honjo, H., Ikeda, S., Watanabe, T., Miura, S., Inoue, H., Tanigawa, T., Noguchi, Y., & Yasuhira, M. (2020). Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm. IEEE Transactions on Electron Devices, 67(3), 995-1000. [8995801]. https://doi.org/10.1109/TED.2020.2966731

Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm. / Nishioka, K.; Sato, H.; Endoh, T.; Honjo, H.; Ikeda, S.; Watanabe, T.; Miura, S.; Inoue, H.; Tanigawa, T.; Noguchi, Y.; Yasuhira, M.

In: IEEE Transactions on Electron Devices, Vol. 67, No. 3, 8995801, 03.2020, p. 995-1000.

Research output: Contribution to journal › Article

Nishioka, K, Sato, H, Endoh, T , Honjo, H , Ikeda, S, Watanabe, T, Miura, S, Inoue, H, Tanigawa, T, Noguchi, Y & Yasuhira, M 2020, 'Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm', IEEE Transactions on Electron Devices, vol. 67, no. 3, 8995801, pp. 995-1000. https://doi.org/10.1109/TED.2020.2966731

Nishioka, K. ; Sato, H. ; Endoh, T. ; Honjo, H. ; Ikeda, S. ; Watanabe, T. ; Miura, S. ; Inoue, H. ; Tanigawa, T. ; Noguchi, Y. ; Yasuhira, M. / Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm. In: IEEE Transactions on Electron Devices. 2020 ; Vol. 67, No. 3. pp. 995-1000.

@article{6ea1c05b29f54e8da827c86a8addd191,

title = "Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm",

abstract = "We have proposed a novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency defined as the ratio of Δ to intrinsic critical current IC0 ( Δ /IC0 ) by a factor of 1.5-2 compared with the conventional double-interface MTJ technology. The free layer of the developed quad interface consists of bottom-MgO/FL1/middle-MgO/FL2/top-MgO stack structure. We successfully fabricated the quad-interface MTJ using a 300-mm process based on a novel low-damage integration process including physical vapor deposition (PVD), reactive ion etching (RIE), and so on. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ /IC0 at the same time. Moreover, we have achieved about two times larger tunnel magnetoresistance (TMR) ratio at the same resistance area (RA) product by developing the FL1, bottom-MgO, and middle-MgO. The developed quad-interface MTJ technology considered as post-double-interface MTJ technology will become an essential technology for the scaling of the spin-transfer-torque magnetoresistive random access memory (STT-MRAM) beyond 20 nm.",

keywords = "Interfacial anisotropy type magnetic tunnel junction (MTJ), quad interface, spin-transfer-torque magnetoresistive random access memory (STT-MRAM), switching efficiency, thermal stability factor",

author = "K. Nishioka and H. Sato and T. Endoh and H. Honjo and S. Ikeda and T. Watanabe and S. Miura and H. Inoue and T. Tanigawa and Y. Noguchi and M. Yasuhira",

year = "2020",

month = mar,

doi = "10.1109/TED.2020.2966731",

language = "English",

volume = "67",

pages = "995--1000",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm

AU - Nishioka, K.

AU - Sato, H.

AU - Endoh, T.

AU - Honjo, H.

AU - Ikeda, S.

AU - Watanabe, T.

AU - Miura, S.

AU - Inoue, H.

AU - Tanigawa, T.

AU - Noguchi, Y.

AU - Yasuhira, M.

PY - 2020/3

Y1 - 2020/3

N2 - We have proposed a novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency defined as the ratio of Δ to intrinsic critical current IC0 ( Δ /IC0 ) by a factor of 1.5-2 compared with the conventional double-interface MTJ technology. The free layer of the developed quad interface consists of bottom-MgO/FL1/middle-MgO/FL2/top-MgO stack structure. We successfully fabricated the quad-interface MTJ using a 300-mm process based on a novel low-damage integration process including physical vapor deposition (PVD), reactive ion etching (RIE), and so on. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ /IC0 at the same time. Moreover, we have achieved about two times larger tunnel magnetoresistance (TMR) ratio at the same resistance area (RA) product by developing the FL1, bottom-MgO, and middle-MgO. The developed quad-interface MTJ technology considered as post-double-interface MTJ technology will become an essential technology for the scaling of the spin-transfer-torque magnetoresistive random access memory (STT-MRAM) beyond 20 nm.

AB - We have proposed a novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency defined as the ratio of Δ to intrinsic critical current IC0 ( Δ /IC0 ) by a factor of 1.5-2 compared with the conventional double-interface MTJ technology. The free layer of the developed quad interface consists of bottom-MgO/FL1/middle-MgO/FL2/top-MgO stack structure. We successfully fabricated the quad-interface MTJ using a 300-mm process based on a novel low-damage integration process including physical vapor deposition (PVD), reactive ion etching (RIE), and so on. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ /IC0 at the same time. Moreover, we have achieved about two times larger tunnel magnetoresistance (TMR) ratio at the same resistance area (RA) product by developing the FL1, bottom-MgO, and middle-MgO. The developed quad-interface MTJ technology considered as post-double-interface MTJ technology will become an essential technology for the scaling of the spin-transfer-torque magnetoresistive random access memory (STT-MRAM) beyond 20 nm.

KW - Interfacial anisotropy type magnetic tunnel junction (MTJ)

KW - quad interface

KW - spin-transfer-torque magnetoresistive random access memory (STT-MRAM)

KW - switching efficiency

KW - thermal stability factor

UR - http://www.scopus.com/inward/record.url?scp=85080865956&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85080865956&partnerID=8YFLogxK

U2 - 10.1109/TED.2020.2966731

DO - 10.1109/TED.2020.2966731

M3 - Article

AN - SCOPUS:85080865956

VL - 67

SP - 995

EP - 1000

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 3

M1 - 8995801

ER -