Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm

K. Nishioka, H. Sato, T. Endoh, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have proposed a novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency defined as the ratio of Δ to intrinsic critical current IC0 ( Δ /IC0 ) by a factor of 1.5-2 compared with the conventional double-interface MTJ technology. The free layer of the developed quad interface consists of bottom-MgO/FL1/middle-MgO/FL2/top-MgO stack structure. We successfully fabricated the quad-interface MTJ using a 300-mm process based on a novel low-damage integration process including physical vapor deposition (PVD), reactive ion etching (RIE), and so on. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ /IC0 at the same time. Moreover, we have achieved about two times larger tunnel magnetoresistance (TMR) ratio at the same resistance area (RA) product by developing the FL1, bottom-MgO, and middle-MgO. The developed quad-interface MTJ technology considered as post-double-interface MTJ technology will become an essential technology for the scaling of the spin-transfer-torque magnetoresistive random access memory (STT-MRAM) beyond 20 nm.

Original languageEnglish
Article number8995801
Pages (from-to)995-1000
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume67
Issue number3
DOIs
Publication statusPublished - 2020 Mar

Keywords

  • Interfacial anisotropy type magnetic tunnel junction (MTJ)
  • quad interface
  • spin-transfer-torque magnetoresistive random access memory (STT-MRAM)
  • switching efficiency
  • thermal stability factor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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