Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm

K. Nishioka, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, T. Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We have proposed novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency Δ/IC0 by a factor of 1.5-2 compared with conventional double-interface MTJ technology. We successfully fabricated the quad-interface MTJ using 300mm process based on novel low damage integration process including PVD, RIE and so on [1]. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ/IC0. Moreover, we have achieved about two times larger TMR ratio/RA by the stack development specific for the quad-interface MTJ technology. The developed quad-interface MTJ technology regarded as post-double-interface MTJ technology will become an essential technology for the scaling of the STT-MRAM beyond 20nm.

Original languageEnglish
Title of host publication2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT120-T121
ISBN (Electronic)9784863487178
DOIs
Publication statusPublished - 2019 Jun
Event39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan
Duration: 2019 Jun 92019 Jun 14

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2019-June
ISSN (Print)0743-1562

Conference

Conference39th Symposium on VLSI Technology, VLSI Technology 2019
CountryJapan
CityKyoto
Period19/6/919/6/14

Keywords

  • Quad interface
  • STT-MRAM
  • interfacial anisotropy type MTJ
  • switching efficiency
  • thermal stability factor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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