Novel Mn-doped chalcopyrites

K. Sato, G. A. Medvedkin, T. Ishibashi, S. Mitani, K. Takanashi, Y. Ishida, D. D. Sarma, J. Okabayashi, A. Fujimori, T. Kamatani, H. Akai

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


Heavily Mn-doped II-VI-V2 semiconductors, such as CdGeP 2 and ZnGeP2 have been prepared by depositing Mn on single crystalline substrate at nearly 400 °C in an ultra high vacuum chamber. Well-defined ferromagnetic hysteresis with a saturation behavior appears in the magnetization curve up to above room temperature. The chemical states of the ZnGeP2:Mn interface has been clarified by a careful in situ photoemission spectroscopy. The as-prepared surface consists of Ge-rich, metallic Mn compound. In and below the sub-surface region, dilute divalent Mn species as precursors of the DMS phase exist. No MnP phase was observed at any stage of the depth profile. Theoretical band-calculation suggests that the system with vacancies (Cd, Vc, Mn)GeP2 or a non-stoichiometric (Cd, Ge, Mn)GeP2 are ferromagnetic and energetically stable although ferromagnetism is not stable in a stoichiometric compound (Cd, Mn)GeP2.

Original languageEnglish
Pages (from-to)1461-1468
Number of pages8
JournalJournal of Physics and Chemistry of Solids
Issue number9-10
Publication statusPublished - 2003 Sep


  • C. Ab initio calculation
  • C. Photoelectron spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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