Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ

Takashi Saito, Kenchi Ito, Hiroaki Honjo, Shoji Ikeda, Tetsuo Endoh

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We propose a novel method to evaluate the accurate thermal stability factor Δ0 quickly, in 10 min for one target magnetic tunnel junction (MTJ), without magnetoresistance random access memory chip which includes CMOS devices. This method is based on the thermal disturbance between parallel state and antiparallel state at high temperature as well as the temperature dependence of material properties. Using this method, we have successfully demonstrated that Δ0 factors of 70 nm φ p-MTJ with single and double CoFeB/MgO interfaces at 24 °C are 76.1 and 178.2, respectively. The value of Δ0 of p-MTJ with double CoFeB/MgO interface is about twice as single one.

Original languageEnglish
Article number3400505
JournalIEEE Transactions on Magnetics
Volume54
Issue number4
DOIs
Publication statusPublished - 2018 Apr

Keywords

  • Magnetic tunnel junction (MTJ)
  • spin-transfer-torque magnetoresistance random access memory (STT-MRAM)
  • thermal disturbance
  • thermal stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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