Novel method for the preparation of silicon oxide layer on TiO2 particle and dynamic behavior of silicon oxide layer on TiO2 particle

Y. Atou, H. Suzuki, Yuki Kimura, T. Sato, T. Tanigaki, Y. Saito, C. Kaito

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

Two methods for the preparation of TiO2 particles using the gas evaporation methods have been proposed. A method for selective growth of the anatase and/or rutile particles as well as a method of covering TiO2 particles with an SiO2 layer has been developed. The process of dissolving the SiO2 layer into TiO2 particles has been observed by an in situ observation using high-resolution electron microscopy. SiO2 layers of 5 nm order were dissolved completely into TiO2 particles of the order of 30 nm at 750°C. These SiO2 layers appeared again at room temperature on the surfaces of TiO2 particles. This phenomenon was observed only at a high temperature. By the use of the phenomenon of dissolving the SiO2 layer into TiO2 particles at high temperature, the growth of TiO2 particles covered with the SiO2 layer has been discussed.

Original languageEnglish
Pages (from-to)179-189
Number of pages11
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume16
Issue number2
DOIs
Publication statusPublished - 2003 Feb 1

Keywords

  • Gas evaporation method
  • In situ observation
  • Silica coating
  • TiO particle

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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