Novel magnetostrictive memory device

V. Novosad, Y. Otani, A. Ohsawa, S. G. Kim, K. Fukamichi, J. Koike, K. Maruyama, O. Kitakami, Y. Shimada

Research output: Contribution to journalConference articlepeer-review

80 Citations (Scopus)


A stress-operated memory device consisting of an ellipsoidal magnetic particle array and an electrostrictive grid is proposed. In the device, the magnetic state of the particle can be controlled only by the magnetostriction effect. Each particle is located at the intersection of the grid and has an in-plane uniaxial anisotropy. A pair of electric contacts is connected to the end of each wire. In the writing process, the driving voltages are simultaneously applied to two pairs of the selected contacts. This allows to apply a local electric field whose direction and amplitude can be regulated by varying the voltage intensity and polarity. The exerting stress on the magnetic particle results in the linear magnetostriction and hence an additional anisotropy energy in the particle. The in-plane total energy minimum, corresponding to the magnetization direction, follows the local electric field. Consequently the magnetization of the single magnetic particle located at the intersection can therefore be selectively switched.

Original languageEnglish
Pages (from-to)6400-6402
Number of pages3
JournalJournal of Applied Physics
Issue number9 III
Publication statusPublished - 2000 May 1
Event44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States
Duration: 1999 Nov 151999 Nov 18

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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