Abstract
A stress-operated memory device consisting of an ellipsoidal magnetic particle array and an electrostrictive grid is proposed. In the device, the magnetic state of the particle can be controlled only by the magnetostriction effect. Each particle is located at the intersection of the grid and has an in-plane uniaxial anisotropy. A pair of electric contacts is connected to the end of each wire. In the writing process, the driving voltages are simultaneously applied to two pairs of the selected contacts. This allows to apply a local electric field whose direction and amplitude can be regulated by varying the voltage intensity and polarity. The exerting stress on the magnetic particle results in the linear magnetostriction and hence an additional anisotropy energy in the particle. The in-plane total energy minimum, corresponding to the magnetization direction, follows the local electric field. Consequently the magnetization of the single magnetic particle located at the intersection can therefore be selectively switched.
Original language | English |
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Pages (from-to) | 6400-6402 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 87 |
Issue number | 9 III |
DOIs | |
Publication status | Published - 2000 May 1 |
Event | 44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States Duration: 1999 Nov 15 → 1999 Nov 18 |
ASJC Scopus subject areas
- Physics and Astronomy(all)