We developed novel interconnection technology for heterogeneous integration of MEMS and LSI multi-chip module, in which MEMS and LSI chips would be horizontally integrated on substrate and vertically stacked each others. The cavity chip composed of deep Cu TSV-beam lead interconnections was developed for interconnecting MEMS chips with high step height of more than few hundreds micrometer without the degradation of sensing elements. Fundamental characteristics were successfully obtained from pressure sensing MEMS chip with 360 μm thickness, which was connected to Si substrate by the cavity chip. MEMS and LSI chips were vertically integrated by using the cavity chip without any changing of chip design and extra processes. This interconnection technology can give strong solution for heterogeneous integration of MEMS and LSI chips multi-chip module.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Hardware and Architecture
- Electrical and Electronic Engineering