Novel IGBT module design, material and reliability technology for 175°C continuous operation

Takashi Saito, Yoshitaka Nishimura, Fumihiko Momose, Akira Morozumi, Yuta Tamai, Eiji Mochizuki, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

One solution for increasing output power in general purpose inverters is raising the operation temperature of Insulated Gate Bipolar Transistor (IGBT) modules by junction max temperature (Tjmax) =175°C against conventional Tjmax=150°C. However, the main problem for Tjmax=175°C operation is decreased the power cycling (P/C) capability caused by higher temperature. In this paper, we investigated the failure mechanisms of P/C test at Tjmax=175°C. From these detailed investigations, the failure modes of IGBT module are dominated by three joint parts under three categorized temperature regions. By using these results, we have developed three new technologies to achieve higher P/C capability: (a) New Al alloy bonding wire with higher fatigue capability, (b) High strength solder at high temperature, (c) New die electrode metallization with higher strength under high temperature and lower thermal stress between Si die and Al wire. With these technologies, our new IGBT module has the excellent P/C capability of continuous operation at Tjmax=175°C and longer lifetime compared with the conventional one.

Original languageEnglish
Title of host publication2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4367-4372
Number of pages6
ISBN (Electronic)9781479956982
DOIs
Publication statusPublished - 2014 Nov 11
Externally publishedYes

Publication series

Name2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014

ASJC Scopus subject areas

  • Fuel Technology
  • Energy Engineering and Power Technology

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