TY - GEN
T1 - Novel IGBT module design, material and reliability technology for 175°C continuous operation
AU - Saito, Takashi
AU - Nishimura, Yoshitaka
AU - Momose, Fumihiko
AU - Morozumi, Akira
AU - Tamai, Yuta
AU - Mochizuki, Eiji
AU - Takahashi, Yoshikazu
PY - 2014/11/11
Y1 - 2014/11/11
N2 - One solution for increasing output power in general purpose inverters is raising the operation temperature of Insulated Gate Bipolar Transistor (IGBT) modules by junction max temperature (Tjmax) =175°C against conventional Tjmax=150°C. However, the main problem for Tjmax=175°C operation is decreased the power cycling (P/C) capability caused by higher temperature. In this paper, we investigated the failure mechanisms of P/C test at Tjmax=175°C. From these detailed investigations, the failure modes of IGBT module are dominated by three joint parts under three categorized temperature regions. By using these results, we have developed three new technologies to achieve higher P/C capability: (a) New Al alloy bonding wire with higher fatigue capability, (b) High strength solder at high temperature, (c) New die electrode metallization with higher strength under high temperature and lower thermal stress between Si die and Al wire. With these technologies, our new IGBT module has the excellent P/C capability of continuous operation at Tjmax=175°C and longer lifetime compared with the conventional one.
AB - One solution for increasing output power in general purpose inverters is raising the operation temperature of Insulated Gate Bipolar Transistor (IGBT) modules by junction max temperature (Tjmax) =175°C against conventional Tjmax=150°C. However, the main problem for Tjmax=175°C operation is decreased the power cycling (P/C) capability caused by higher temperature. In this paper, we investigated the failure mechanisms of P/C test at Tjmax=175°C. From these detailed investigations, the failure modes of IGBT module are dominated by three joint parts under three categorized temperature regions. By using these results, we have developed three new technologies to achieve higher P/C capability: (a) New Al alloy bonding wire with higher fatigue capability, (b) High strength solder at high temperature, (c) New die electrode metallization with higher strength under high temperature and lower thermal stress between Si die and Al wire. With these technologies, our new IGBT module has the excellent P/C capability of continuous operation at Tjmax=175°C and longer lifetime compared with the conventional one.
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U2 - 10.1109/ECCE.2014.6953996
DO - 10.1109/ECCE.2014.6953996
M3 - Conference contribution
AN - SCOPUS:84934344054
T3 - 2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014
SP - 4367
EP - 4372
BT - 2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -