Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5kV power pack IGBT

Koh Yoshikawa, Takeharu Koga, Takeshi Fujii, Tsutomu Katoh, Yoshikazu Takahashi, Yasukazu Seki

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)

Abstract

A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes ( peak collector voltage=2500V, Tj=125°C) and the short circuit capability of over 50μsec (VCC=1600V, Tj=125°C) are successfully attained by a newly developed Power Pack IGBT. In this paper, the simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results.

Original languageEnglish
Pages177-180
Number of pages4
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1999 11th International Symposium on Power Semiconductor Devices and IC's, ISPSD'99 - Toronto, Ont, Can
Duration: 1999 May 261999 May 28

Other

OtherProceedings of the 1999 11th International Symposium on Power Semiconductor Devices and IC's, ISPSD'99
CityToronto, Ont, Can
Period99/5/2699/5/28

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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