Novel germanium-based magnetic semiconductors

F. Tsui, L. He, L. Ma, A. Tkachuk, Y. S. Chu, K. Nakajima, T. Chikyow

Research output: Contribution to journalArticlepeer-review

126 Citations (Scopus)

Abstract

Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high [Formula presented] and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum [Formula presented] achieved in the semiconducting materials is [Formula presented] at a composition of [Formula presented].

Original languageEnglish
JournalPhysical review letters
Volume91
Issue number17
DOIs
Publication statusPublished - 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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