Novel germanium-based magnetic semiconductors

F. Tsui; L. He; L. Ma; A. Tkachuk; Y. S. Chu; K. Nakajima; T. Chikyow

doi:10.1103/PhysRevLett.91.177203

Novel germanium-based magnetic semiconductors

F. Tsui, L. He, L. Ma, A. Tkachuk, Y. S. Chu, K. Nakajima, T. Chikyow

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

126 Citations (Scopus)

Abstract

Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high [Formula presented] and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum [Formula presented] achieved in the semiconducting materials is [Formula presented] at a composition of [Formula presented].

Original language	English
Journal	Physical review letters
Volume	91
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.91.177203
Publication status	Published - 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high [Formula presented] and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum [Formula presented] achieved in the semiconducting materials is [Formula presented] at a composition of [Formula presented].",

author = "F. Tsui and L. He and L. Ma and A. Tkachuk and Chu, {Y. S.} and K. Nakajima and T. Chikyow",

year = "2003",

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T1 - Novel germanium-based magnetic semiconductors

AU - Tsui, F.

AU - He, L.

AU - Ma, L.

AU - Tkachuk, A.

AU - Chu, Y. S.

AU - Nakajima, K.

AU - Chikyow, T.

PY - 2003

Y1 - 2003

N2 - Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high [Formula presented] and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum [Formula presented] achieved in the semiconducting materials is [Formula presented] at a composition of [Formula presented].

AB - Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high [Formula presented] and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum [Formula presented] achieved in the semiconducting materials is [Formula presented] at a composition of [Formula presented].

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ER -

Novel germanium-based magnetic semiconductors

Abstract

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