In this paper, the novel field effect diode (FED) type vertical capacitorless one transistor dynamic random access memory (1T-DRAM) cell with negative hold bit line (BL) voltage (VBL) scheme is proposed. In comparison with the conventional planar type, the proposed vertical type with negative hold VBL scheme shows excellent static and disturb retention time. The proposed vertical type memory cell with negative hold VBL scheme achieves 1,000 times longer static retention time and 104 times longer BL disturb retention time at 85 C than that of the conventional planar type. Furthermore, the proposed vertical type memory cell has a small cell size of 4F2 due to its stacked vertical structure. The proposed FED type vertical capacitorless 1T-DRAM cell with negative hold VBL scheme is shown to be an excellent candidate for stand-alone and embedded memory applications and extends scaling limitations.
ASJC Scopus subject areas
- Physics and Astronomy(all)