Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching

Kiyoshi Araki, Kiyoshi Morimoto, Kiyoyuki Morita, Masaaki Niwa, Yoshihiko Hirai

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We have demonstrated a novel method of fabricating Si nanostructures. Based on a combination of atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching, Si nanostructures with a minimum width of 50 nm are successfully obtained within the intended area with precise alignment. Overlay patterning followed by AFM field-enhanced oxidation is carried out with high accuracy. It is confirmed that the field-enhanced oxide line with a thickness of at least about 3 nm can act as an mask against anisotropic wet chemical etching. This method enables the realization of sub-10 nm Si nanostructures.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
EditorsY. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
Pages6347-6695
Number of pages349
Edition12 B
Publication statusPublished - 1996 Dec
EventProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
Duration: 1996 Jul 81996 Jul 11

Publication series

NameJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
Number12 B
Volume35

Other

OtherProceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn
Period96/7/896/7/11

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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