Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching

Kiyoshi Araki, Kiyoshi Morimoto, Kiyoyuki Morita, Masaaki Niwa, Yoshihiko Hirai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have demonstrated a novel method of fabricating Si nanostructures. Based on a combination of atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching, Si nanostructures with a minimum width of 50 nm are successfully obtained within the intended area with precise alignment. Overlay the field-enhanced oxide line with a thickness of at least about 3 nm can act as an mask against anisotropic wet chemical etching. This method enables the realization of sub-10 nm Si nanostructures.

Original languageEnglish
Pages (from-to)6679-6682
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number12 SUPPL. B
DOIs
Publication statusPublished - 1996 Dec

Keywords

  • Alignment
  • Anisotropic wet chemical etching
  • Atomic force microscope
  • Field-enhanced oxidation
  • Nanofabrication
  • Quantum functional device
  • Si nanostructure

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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