TY - JOUR
T1 - Novel device structure for phase change memory toward low-current operation
AU - Kim, Eunha
AU - Kang, Nam Soo
AU - Yang, Hyung Jun
AU - Sutou, Yuji
AU - Song, Yun Heub
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/9/1
Y1 - 2015/9/1
N2 - We present a novel device architecture for low set and reset currents in phase change random access memory (PCRAM). In this structure, the sidewall of phase-change film is contacted with the vertical heating layer. In particular, to realize a small contact area of under 50 nm2 for low reset current, this structure includes stacked layers consisting of extremely thin phase change material (PCM) and conduction films, the fabrication method of which is proposed. We estimated set and reset currents for the proposed structure by the device simulation method. Here, we confirmed that a contact area of 30nm2 in this structure, where Ge2Sb2Te5 is used as PCM, provides a reset current of 13.5 μA and a set current of 4 μA, which are promising for the scaling down of PCM. Furthermore, it is confirmed that the thinner PCM in this structure provides less thermal disturbance to the neighboring cell. From the results, we expect this structure to be a promising candidate for a high-density nonvolatile memory architecture with PCM.
AB - We present a novel device architecture for low set and reset currents in phase change random access memory (PCRAM). In this structure, the sidewall of phase-change film is contacted with the vertical heating layer. In particular, to realize a small contact area of under 50 nm2 for low reset current, this structure includes stacked layers consisting of extremely thin phase change material (PCM) and conduction films, the fabrication method of which is proposed. We estimated set and reset currents for the proposed structure by the device simulation method. Here, we confirmed that a contact area of 30nm2 in this structure, where Ge2Sb2Te5 is used as PCM, provides a reset current of 13.5 μA and a set current of 4 μA, which are promising for the scaling down of PCM. Furthermore, it is confirmed that the thinner PCM in this structure provides less thermal disturbance to the neighboring cell. From the results, we expect this structure to be a promising candidate for a high-density nonvolatile memory architecture with PCM.
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U2 - 10.7567/JJAP.54.094302
DO - 10.7567/JJAP.54.094302
M3 - Article
AN - SCOPUS:84941009301
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9
M1 - 094302
ER -