TY - JOUR
T1 - Novel current collapse mode induced by source leakage current in AlGaN/GaN high-electron-mobility transistors and its impact
AU - Tsubomi, Kunihiro
AU - Muraguchi, Masakazu
AU - Endoh, Tetsuo
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016
Y1 - 2016
N2 - The suppression of the current collapse phenomenon is required for reducing on-resistance in AlGaN/GaN high-electron-mobility transistors. Current collapse is caused by electron trapping at the surface and in the buffer layer. In previous works, electron injection to traps has been mainly regarded as being due to gate leakage current; however, other factors have not been discussed. In this study, a novel current collapse mode induced by source leakage current is examined with a 2D device simulator. In addition to gate leakage current, electron trapping is induced by source leakage current that flows under the gate electrode during the off-state. The electron trapping increases on-resistance and decreases pinch-off voltage. The increase in on-resistance is clarified under several trap and voltage conditions. In the simulated range, it is revealed that the on-resistance increases over 1.31 times by the source current collapse mode only, when the stress drain voltage of 500 V is applied during the off-state.
AB - The suppression of the current collapse phenomenon is required for reducing on-resistance in AlGaN/GaN high-electron-mobility transistors. Current collapse is caused by electron trapping at the surface and in the buffer layer. In previous works, electron injection to traps has been mainly regarded as being due to gate leakage current; however, other factors have not been discussed. In this study, a novel current collapse mode induced by source leakage current is examined with a 2D device simulator. In addition to gate leakage current, electron trapping is induced by source leakage current that flows under the gate electrode during the off-state. The electron trapping increases on-resistance and decreases pinch-off voltage. The increase in on-resistance is clarified under several trap and voltage conditions. In the simulated range, it is revealed that the on-resistance increases over 1.31 times by the source current collapse mode only, when the stress drain voltage of 500 V is applied during the off-state.
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U2 - 10.7567/JJAP.55.08PD06
DO - 10.7567/JJAP.55.08PD06
M3 - Article
AN - SCOPUS:85065732477
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8S2
M1 - 08PD06
ER -