Novel amorphization process in silicon induced by electron irradiation

J. Yamasaki, Y. Ohno, H. Kohno, N. Ozaki, S. Takeda

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We recently found that amorphization is induced in Si by MeV electron irradiation. In order to account for the steady-state diagram under electron irradiation, we propose a phenomenological theory which takes into account the two competing mechanisms, namely amorphization by higher energy recoils and recrystallization by lower energy recoils as well as thermal process. We apply the new amorphization method to fabricating artificial arrangements of the columns of a-Si in a c-Si film, and discuss its use for photonic crystal based on photonic band calculation.

Original languageEnglish
Pages (from-to)793-797
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume299-302
Issue numberPART 2
DOIs
Publication statusPublished - 2002 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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