Normal-pressure and low-temperature thermal oxidation of silicon

Hongyong Zhang, Hiroshi Kanoh, Osamu Sugiura, Shunri Oda, Yasutaka Uchida, Takeo Hattori, Masakiyo Matsumura

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A new thermal oxidation method of silicon has been proposed and its feasibility has been demonstrated experimentally. Silicon-dioxide of 7 nm thickness was grown within 24 h at about 250°C by continuously supplying fresh nitric acid to a reaction tube under normal-pressure conditions. Detailed oxidation characteristics as well as the structure of the oxide are described. The oxide/semiconductor interface was changed from accumulation state to inversion state, and vice versa, by an application of the gate voltage. The minimum interface state density after 350°C annealing was about 2×1011 cm-2 eV-1.

Original languageEnglish
Pages (from-to)1907-1911
Number of pages5
JournalJapanese journal of applied physics
Volume26
Issue number11 R
DOIs
Publication statusPublished - 1987 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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