TY - JOUR
T1 - Normal-pressure and low-temperature thermal oxidation of silicon
AU - Zhang, Hongyong
AU - Kanoh, Hiroshi
AU - Sugiura, Osamu
AU - Oda, Shunri
AU - Uchida, Yasutaka
AU - Hattori, Takeo
AU - Matsumura, Masakiyo
PY - 1987/11
Y1 - 1987/11
N2 - A new thermal oxidation method of silicon has been proposed and its feasibility has been demonstrated experimentally. Silicon-dioxide of 7 nm thickness was grown within 24 h at about 250°C by continuously supplying fresh nitric acid to a reaction tube under normal-pressure conditions. Detailed oxidation characteristics as well as the structure of the oxide are described. The oxide/semiconductor interface was changed from accumulation state to inversion state, and vice versa, by an application of the gate voltage. The minimum interface state density after 350°C annealing was about 2×1011 cm-2 eV-1.
AB - A new thermal oxidation method of silicon has been proposed and its feasibility has been demonstrated experimentally. Silicon-dioxide of 7 nm thickness was grown within 24 h at about 250°C by continuously supplying fresh nitric acid to a reaction tube under normal-pressure conditions. Detailed oxidation characteristics as well as the structure of the oxide are described. The oxide/semiconductor interface was changed from accumulation state to inversion state, and vice versa, by an application of the gate voltage. The minimum interface state density after 350°C annealing was about 2×1011 cm-2 eV-1.
UR - http://www.scopus.com/inward/record.url?scp=0023454557&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0023454557&partnerID=8YFLogxK
U2 - 10.1143/JJAP.26.1907
DO - 10.1143/JJAP.26.1907
M3 - Article
AN - SCOPUS:0023454557
VL - 26
SP - 1907
EP - 1911
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 R
ER -