Normal-pressure and low-temperature thermal oxidation of silicon

Hongyong Zhang, Hiroshi Kanoh, Osamu Sugiura, Shunri Oda, Yasutaka Uchida, Takeo Hattori, Masakiyo Matsumura

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    6 Citations (Scopus)

    Abstract

    A new thermal oxidation method of silicon has been proposed and its feasibility has been demonstrated experimentally. Silicon-dioxide of 7 nm thickness was grown within 24 h at about 250°C by continuously supplying fresh nitric acid to a reaction tube under normal-pressure conditions. Detailed oxidation characteristics as well as the structure of the oxide are described. The oxide/semiconductor interface was changed from accumulation state to inversion state, and vice versa, by an application of the gate voltage. The minimum interface state density after 350°C annealing was about 2×1011 cm-2 eV-1.

    Original languageEnglish
    Pages (from-to)1907-1911
    Number of pages5
    JournalJapanese journal of applied physics
    Volume26
    Issue number11 R
    DOIs
    Publication statusPublished - 1987 Nov

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • Cite this

    Zhang, H., Kanoh, H., Sugiura, O., Oda, S., Uchida, Y., Hattori, T., & Matsumura, M. (1987). Normal-pressure and low-temperature thermal oxidation of silicon. Japanese journal of applied physics, 26(11 R), 1907-1911. https://doi.org/10.1143/JJAP.26.1907