Abstract
A new thermal oxidation method of silicon has been proposed and its feasibility has been demonstrated experimentally. Silicon-dioxide of 7 nm thickness was grown within 24 h at about 250°C by continuously supplying fresh nitric acid to a reaction tube under normal-pressure conditions. Detailed oxidation characteristics as well as the structure of the oxide are described. The oxide/semiconductor interface was changed from accumulation state to inversion state, and vice versa, by an application of the gate voltage. The minimum interface state density after 350°C annealing was about 2×1011 cm-2 eV-1.
| Original language | English |
|---|---|
| Pages (from-to) | 1907-1911 |
| Number of pages | 5 |
| Journal | Japanese journal of applied physics |
| Volume | 26 |
| Issue number | 11 R |
| DOIs | |
| Publication status | Published - 1987 Nov |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Zhang, H., Kanoh, H., Sugiura, O., Oda, S., Uchida, Y., Hattori, T., & Matsumura, M. (1987). Normal-pressure and low-temperature thermal oxidation of silicon. Japanese journal of applied physics, 26(11 R), 1907-1911. https://doi.org/10.1143/JJAP.26.1907