Nonvolatile Transport States in Ferrite Thin Films Induced by Field-Effect Involving Redox Processes

Kohei Fujiwara; Takashi Ichimura; Hidekazu Tanaka

doi:10.1002/admi.201300108

Nonvolatile Transport States in Ferrite Thin Films Induced by Field-Effect Involving Redox Processes

Kohei Fujiwara, Takashi Ichimura, Hidekazu Tanaka

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The conductivity and magnetoresistance of a practically useful ferrite compound are found to be electrically programmable in a nonvolatile manner. Electric-double-layer gating using an ionic liquid changes the surface oxidation state of spinel zinc ferrite via reversible redox processes. This unique electric-field effect, distinct from conventional electrostatic carrier doping, provides a new route for developing oxide-based field-effect devices.

Original language	English
Article number	1300108
Journal	Advanced Materials Interfaces
Volume	1
Issue number	3
DOIs	https://doi.org/10.1002/admi.201300108
Publication status	Published - 2014 Jun 1
Externally published	Yes

Keywords

ferrites
field effects
magnetic materials
transition-metal oxides

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering

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10.1002/admi.201300108

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AB - The conductivity and magnetoresistance of a practically useful ferrite compound are found to be electrically programmable in a nonvolatile manner. Electric-double-layer gating using an ionic liquid changes the surface oxidation state of spinel zinc ferrite via reversible redox processes. This unique electric-field effect, distinct from conventional electrostatic carrier doping, provides a new route for developing oxide-based field-effect devices.

KW - ferrites

KW - field effects

KW - magnetic materials

KW - transition-metal oxides

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Nonvolatile Transport States in Ferrite Thin Films Induced by Field-Effect Involving Redox Processes

Abstract

Keywords

ASJC Scopus subject areas

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