Nonvolatile logic and memory devices based on spintronics

Tetsuo Endoh

doi:10.1109/ISCAS.2015.7168558

Nonvolatile logic and memory devices based on spintronics

Tetsuo Endoh

ENG - Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

New computer memory hierarchy based on spintronics is proposed for low-power electronics that will evolve in two steps from the current volatile system. At first, memories for internal states and pipeline registers and cache memories etc. are made nonvolatile by using spintronics. Then, computers can be made totally nonvolatile by additionally adopting spintronics-based logic-in-memory architecture. Nonvolatile MPU, recognition processor and cache memory that use magnetic tunnel junction (MTJ) have been designed and fabricated to demonstrate their superior features in low static power and high speed data store and restore operations.

Original language	English
Title of host publication	2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	13-16
Number of pages	4
ISBN (Electronic)	9781479983919
DOIs	https://doi.org/10.1109/ISCAS.2015.7168558
Publication status	Published - 2015 Jul 27
Event	IEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal Duration: 2015 May 24 → 2015 May 27

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	2015-July
ISSN (Print)	0271-4310

Other

Other	IEEE International Symposium on Circuits and Systems, ISCAS 2015
Country/Territory	Portugal
City	Lisbon
Period	15/5/24 → 15/5/27

Keywords

STT-MRAM
magnetic tunnel junction
nonvolatile computer
power gating
spintronics

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISCAS.2015.7168558

Cite this

Nonvolatile logic and memory devices based on spintronics. / Endoh, Tetsuo.

2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 13-16 7168558 (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2015-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endoh, T 2015, Nonvolatile logic and memory devices based on spintronics. in 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015., 7168558, Proceedings - IEEE International Symposium on Circuits and Systems, vol. 2015-July, Institute of Electrical and Electronics Engineers Inc., pp. 13-16, IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, 15/5/24. https://doi.org/10.1109/ISCAS.2015.7168558

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abstract = "New computer memory hierarchy based on spintronics is proposed for low-power electronics that will evolve in two steps from the current volatile system. At first, memories for internal states and pipeline registers and cache memories etc. are made nonvolatile by using spintronics. Then, computers can be made totally nonvolatile by additionally adopting spintronics-based logic-in-memory architecture. Nonvolatile MPU, recognition processor and cache memory that use magnetic tunnel junction (MTJ) have been designed and fabricated to demonstrate their superior features in low static power and high speed data store and restore operations.",

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AB - New computer memory hierarchy based on spintronics is proposed for low-power electronics that will evolve in two steps from the current volatile system. At first, memories for internal states and pipeline registers and cache memories etc. are made nonvolatile by using spintronics. Then, computers can be made totally nonvolatile by additionally adopting spintronics-based logic-in-memory architecture. Nonvolatile MPU, recognition processor and cache memory that use magnetic tunnel junction (MTJ) have been designed and fabricated to demonstrate their superior features in low static power and high speed data store and restore operations.

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KW - power gating

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ER -

Nonvolatile logic and memory devices based on spintronics

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

Access to Document

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