Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of substrate pre-annealing on deep level density in Mg-doped GaP liquid-phase epitaxy (LPE) layers were investigated by photocapacitance measurement. With annealing under optimum phosphorus-vapor pressure, concentration of deep donor at EC - 1.9-2.1 eV increased in undoped GaP substrate. Deep level densities in Mg-doped layers were also affected by pre-annealing of the substrates. Densities of dominant deep levels at EV + 0.85 eV and EV + 1.5 eV were an order of magnitude reduced and, in contrast, the level at EC - 2.1 eV in Mg-doped layer increased with long pre-annealing. This level at EC - 2.1 eV is supposed to be involved with P-rich-type nonstoichiometric defects, such as phosphorus interstitial atoms diffused from the surface of the substrate.

Original languageEnglish
Pages (from-to)172-175
Number of pages4
JournalJournal of Electronic Materials
Volume32
Issue number3
DOIs
Publication statusPublished - 2003 Mar

Keywords

  • GaP
  • Heat treatment
  • LPE
  • Nonstoichiometric defect
  • Photocapacitance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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