Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates

Takenori Tanno; Ken Suto; Yutaka Oyama; Jun Ichi Nishizawa

doi:10.1007/s11664-003-0189-9

Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun Ichi Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of substrate pre-annealing on deep level density in Mg-doped GaP liquid-phase epitaxy (LPE) layers were investigated by photocapacitance measurement. With annealing under optimum phosphorus-vapor pressure, concentration of deep donor at E_C - 1.9-2.1 eV increased in undoped GaP substrate. Deep level densities in Mg-doped layers were also affected by pre-annealing of the substrates. Densities of dominant deep levels at E_V + 0.85 eV and E_V + 1.5 eV were an order of magnitude reduced and, in contrast, the level at E_C - 2.1 eV in Mg-doped layer increased with long pre-annealing. This level at E_C - 2.1 eV is supposed to be involved with P-rich-type nonstoichiometric defects, such as phosphorus interstitial atoms diffused from the surface of the substrate.

Original language	English
Pages (from-to)	172-175
Number of pages	4
Journal	Journal of Electronic Materials
Volume	32
Issue number	3
DOIs	https://doi.org/10.1007/s11664-003-0189-9
Publication status	Published - 2003 Mar

Keywords

GaP
Heat treatment
LPE
Nonstoichiometric defect
Photocapacitance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates",

abstract = "The effects of substrate pre-annealing on deep level density in Mg-doped GaP liquid-phase epitaxy (LPE) layers were investigated by photocapacitance measurement. With annealing under optimum phosphorus-vapor pressure, concentration of deep donor at EC - 1.9-2.1 eV increased in undoped GaP substrate. Deep level densities in Mg-doped layers were also affected by pre-annealing of the substrates. Densities of dominant deep levels at EV + 0.85 eV and EV + 1.5 eV were an order of magnitude reduced and, in contrast, the level at EC - 2.1 eV in Mg-doped layer increased with long pre-annealing. This level at EC - 2.1 eV is supposed to be involved with P-rich-type nonstoichiometric defects, such as phosphorus interstitial atoms diffused from the surface of the substrate.",

keywords = "GaP, Heat treatment, LPE, Nonstoichiometric defect, Photocapacitance",

author = "Takenori Tanno and Ken Suto and Yutaka Oyama and Nishizawa, {Jun Ichi}",

year = "2003",

month = mar,

doi = "10.1007/s11664-003-0189-9",

language = "English",

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T1 - Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers

T2 - Effects of pre-annealing of substrates

AU - Tanno, Takenori

AU - Suto, Ken

AU - Oyama, Yutaka

AU - Nishizawa, Jun Ichi

PY - 2003/3

Y1 - 2003/3

N2 - The effects of substrate pre-annealing on deep level density in Mg-doped GaP liquid-phase epitaxy (LPE) layers were investigated by photocapacitance measurement. With annealing under optimum phosphorus-vapor pressure, concentration of deep donor at EC - 1.9-2.1 eV increased in undoped GaP substrate. Deep level densities in Mg-doped layers were also affected by pre-annealing of the substrates. Densities of dominant deep levels at EV + 0.85 eV and EV + 1.5 eV were an order of magnitude reduced and, in contrast, the level at EC - 2.1 eV in Mg-doped layer increased with long pre-annealing. This level at EC - 2.1 eV is supposed to be involved with P-rich-type nonstoichiometric defects, such as phosphorus interstitial atoms diffused from the surface of the substrate.

AB - The effects of substrate pre-annealing on deep level density in Mg-doped GaP liquid-phase epitaxy (LPE) layers were investigated by photocapacitance measurement. With annealing under optimum phosphorus-vapor pressure, concentration of deep donor at EC - 1.9-2.1 eV increased in undoped GaP substrate. Deep level densities in Mg-doped layers were also affected by pre-annealing of the substrates. Densities of dominant deep levels at EV + 0.85 eV and EV + 1.5 eV were an order of magnitude reduced and, in contrast, the level at EC - 2.1 eV in Mg-doped layer increased with long pre-annealing. This level at EC - 2.1 eV is supposed to be involved with P-rich-type nonstoichiometric defects, such as phosphorus interstitial atoms diffused from the surface of the substrate.

KW - GaP

KW - Heat treatment

KW - LPE

KW - Nonstoichiometric defect

KW - Photocapacitance

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