Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

Abstract

We have investigated the relation between deep levels in Mg-doped p-type GaP liquid phase epitaxy (LPE) layers and stoichiometry of the surface of the substrates by PHCAP measurement. Concentration of a deep donor level at E C-1.9-2.1eV is higher in an n-type undoped GaP substrate annealed with applying phosphorus vapor pressure of 20kPa than in sample annealed beneath a carbon cover. Next, Mg-doped LPE layers are grown on substrates that have been pre-annealed under phosphorus vapor pressure just before the growth. The densities of deep levels at EV+0.85 and EV+1.5eV in long-time (2h) pre-annealing sample are greatly decreased, but a deep level at EC-1.9-2.1eV shows opposite tendency. The latter is thought to be identical to a deep level detected in the substrate, probably phosphorus interstitial atoms.

Original languageEnglish
Pages (from-to)437-440
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number5-6
DOIs
Publication statusPublished - 2003 Oct 1

Keywords

  • Complex defect
  • Diffusion
  • Liquid phase epitaxy
  • Photocapacitance
  • Vapor pressure control

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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