Nonresonant detection of terahertz radiation in high-electron-mobility transistor structure using inalas/ingaas/inp material systems at Room Temperature

A. El Moutaouakil, Tetsuya Suemitsu, Taiichi Otsuji, D. Coquillat, W. Knap

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this paper, we report on nonresonant detection of terahertz radiation using the rectification mechanism of two-dimensional plasmons in high-electron-mobility transistors using InAlAs/InGaAs/InP material systems. The experiments were performed at room temperature using a Gunn diode operating at 0.30 THz as the THz source. The measured response was dependent on the polarization of the incident THz wave; The device exhibited higher response when the electric-field vector of the incident radiation was directed in the source-drain direction. The 2D spatial distribution image of the transistor responsivity extracted from the measured response shows a clear beam focus centered on the transistor position, which ensures the appropriate coupling of the terahertz radiation to the device. The device also demonstrated excellent sensitivity/noise performances of ∼125 V/W and ∼10-11 W/Hz0.5 under 0.30 THz radiation.

Original languageEnglish
Pages (from-to)6737-6740
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number8
DOIs
Publication statusPublished - 2012 Aug 1

Keywords

  • Detection
  • Noise-Equivalent Power
  • Responsivity
  • Terahertz

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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