Abstract
We have studied the Rashba constant values α in the In0.52Al0.48As/In0.53Ga0.47As quantum wells (QW), as a function of the degree of the structural inversion asymmetry (SIA), using the weak antilocalization analysis. We control the SIA of the QWs both by the specific sample design and by the applied gate voltage. The deduced α values are in a quantitative agreement with the theoretical values obtained in the k · p-type calculation. We, then, propose a novel spin-filter device solely based on the Rashba effect as an example of the devices that utilize the Rashba spin-orbit coupling effect.
Original language | English |
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Pages (from-to) | 161-162 |
Number of pages | 2 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 18 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2003 May |
Externally published | Yes |
Event | 23rd International Conference on Low Temperature Physics - Hiroshima, Japan Duration: 2002 Aug 20 → 2002 Aug 27 |
Keywords
- InGaAs/InAlAs
- Rashba spin-orbit Coupling
- Spin filter
- Spintronics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics