Nonmagnetic control of spin transport in InGaAs quantum wells

Takaaki Koga; Junsaku Nitta; Supriyo Datta

doi:10.1016/S1386-9477(02)01065-2

Nonmagnetic control of spin transport in InGaAs quantum wells

Takaaki Koga, Junsaku Nitta, Supriyo Datta

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We have studied the Rashba constant values α in the In_0.52Al_0.48As/In_0.53Ga_0.47As quantum wells (QW), as a function of the degree of the structural inversion asymmetry (SIA), using the weak antilocalization analysis. We control the SIA of the QWs both by the specific sample design and by the applied gate voltage. The deduced α values are in a quantitative agreement with the theoretical values obtained in the k · p-type calculation. We, then, propose a novel spin-filter device solely based on the Rashba effect as an example of the devices that utilize the Rashba spin-orbit coupling effect.

Original language	English
Pages (from-to)	161-162
Number of pages	2
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	18
Issue number	1-3
DOIs	https://doi.org/10.1016/S1386-9477(02)01065-2
Publication status	Published - 2003 May
Externally published	Yes
Event	23rd International Conference on Low Temperature Physics - Hiroshima, Japan Duration: 2002 Aug 20 → 2002 Aug 27

Keywords

InGaAs/InAlAs
Rashba spin-orbit Coupling
Spin filter
Spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/S1386-9477(02)01065-2

Cite this

@article{3a5cbeabb57e4908bab7a51f8b37ed76,

title = "Nonmagnetic control of spin transport in InGaAs quantum wells",

abstract = "We have studied the Rashba constant values α in the In0.52Al0.48As/In0.53Ga0.47As quantum wells (QW), as a function of the degree of the structural inversion asymmetry (SIA), using the weak antilocalization analysis. We control the SIA of the QWs both by the specific sample design and by the applied gate voltage. The deduced α values are in a quantitative agreement with the theoretical values obtained in the k · p-type calculation. We, then, propose a novel spin-filter device solely based on the Rashba effect as an example of the devices that utilize the Rashba spin-orbit coupling effect.",

keywords = "InGaAs/InAlAs, Rashba spin-orbit Coupling, Spin filter, Spintronics",

author = "Takaaki Koga and Junsaku Nitta and Supriyo Datta",

note = "Funding Information: This work was supported by the NEDO International Joint Research Grant Program.; 23rd International Conference on Low Temperature Physics ; Conference date: 20-08-2002 Through 27-08-2002",

year = "2003",

month = may,

doi = "10.1016/S1386-9477(02)01065-2",

language = "English",

volume = "18",

pages = "161--162",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Nonmagnetic control of spin transport in InGaAs quantum wells

AU - Koga, Takaaki

AU - Nitta, Junsaku

AU - Datta, Supriyo

N1 - Funding Information: This work was supported by the NEDO International Joint Research Grant Program.

PY - 2003/5

Y1 - 2003/5

N2 - We have studied the Rashba constant values α in the In0.52Al0.48As/In0.53Ga0.47As quantum wells (QW), as a function of the degree of the structural inversion asymmetry (SIA), using the weak antilocalization analysis. We control the SIA of the QWs both by the specific sample design and by the applied gate voltage. The deduced α values are in a quantitative agreement with the theoretical values obtained in the k · p-type calculation. We, then, propose a novel spin-filter device solely based on the Rashba effect as an example of the devices that utilize the Rashba spin-orbit coupling effect.

AB - We have studied the Rashba constant values α in the In0.52Al0.48As/In0.53Ga0.47As quantum wells (QW), as a function of the degree of the structural inversion asymmetry (SIA), using the weak antilocalization analysis. We control the SIA of the QWs both by the specific sample design and by the applied gate voltage. The deduced α values are in a quantitative agreement with the theoretical values obtained in the k · p-type calculation. We, then, propose a novel spin-filter device solely based on the Rashba effect as an example of the devices that utilize the Rashba spin-orbit coupling effect.

KW - InGaAs/InAlAs

KW - Rashba spin-orbit Coupling

KW - Spin filter

KW - Spintronics

UR - http://www.scopus.com/inward/record.url?scp=0037504514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037504514&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)01065-2

DO - 10.1016/S1386-9477(02)01065-2

M3 - Conference article

AN - SCOPUS:0037504514

VL - 18

SP - 161

EP - 162

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-3

T2 - 23rd International Conference on Low Temperature Physics

Y2 - 20 August 2002 through 27 August 2002

ER -

Nonmagnetic control of spin transport in InGaAs quantum wells

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this