Abstract
A family of nonlinear resistor circuits with A and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.
Original language | English |
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Pages (from-to) | 1926-1935 |
Number of pages | 10 |
Journal | IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences |
Volume | E82-A |
Issue number | 9 |
Publication status | Published - 1999 Jan 1 |
Externally published | Yes |
Keywords
- Negative resistors
- Nonlinear resistor circuits
ASJC Scopus subject areas
- Signal Processing
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering
- Applied Mathematics