Nonlinear low-temperature transport of electrons through a multilevel quantum dot

Takeshi Inoshita, Yoshio Kuramoto, Hiroyuki Sakaki

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Nonlinear electron transport through a semiconductor quantum dot in the low-temperature Kondo regime is studied theoretically. Particular emphasis is put on examining the effects of the inherent multilevel electronic structure of the semiconductor dot. Combining the nonequilibrium Green function method with the noncrossing approximation, we derived differential conductance as a function of the source-drain voltage and found that characteristic side peaks appear in addition to the Kondo peak. These side peaks, which survive dissipation broadening, should provide a hallmark of Kondo correlation in this system.

Original languageEnglish
Pages (from-to)75-79
Number of pages5
JournalSuperlattices and Microstructures
Issue number1
Publication statusPublished - 1997 Jul
Externally publishedYes


  • Electron correlation
  • Quantum dot
  • Tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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