Nonequilibrium spin fluctuations in nonmagnetic single-electron transistors and quantum dots

J. Martinek, J. Barnaś, G. Schön, S. Takahashi, S. Maekawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

It is shown that nonequilibrium spin fluctuations significantly influence electronic transport in a single-electron transistor, when the spin relaxation on the island is slow. To describe spin fluctuations, the "orthodox" tunneling theory is generalized by taking into account the electron spin. It is shown that the transition between consecutive charge states can occur via high-spin states, which significantly modifies the shape of Coulomb steps and gives rise to additional resonances at low temperatures.

Original languageEnglish
Pages (from-to)343-346
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume16
Issue number2
Publication statusPublished - 2003 Dec 1

Keywords

  • Quantum dot
  • SET
  • Spin fluctuations
  • Spin-flip relaxation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Martinek, J., Barnaś, J., Schön, G., Takahashi, S., & Maekawa, S. (2003). Nonequilibrium spin fluctuations in nonmagnetic single-electron transistors and quantum dots. Journal of Superconductivity and Novel Magnetism, 16(2), 343-346.