We study transport through two scattering barriers, which are formed by Schottky cross gates on Al0.3Ga0.7As/GaAs Hall bars. The gates sandwich the intermediate region adjusted to the ν = 1 integer quantum-Hall (IQH) state. Nonequilibrium population is noted to be created when ν = 2/3, 3/5, and 1/3 are realized in the regions underneath the gates, suggesting the formation of ν = 2/3, 3/5, and 1/3 fractional quantum-Hall (FQH) edge states in the bulk ν = 1 IQH-state. The unequally occupied FQH-edge states carry the current over a 5 μm distance without equilibration. We discuss the width of incompressible strips in FQH-states from the equilibration length in FQH-edge states.
- Edge states
- Fractional quantum Hall effect
- Nonequilibrium population
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering