Nonequilibrium population in fractional edge states

T. Machida, S. Ishizuka, S. Komiyama, K. Muraki, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We study transport through two scattering barriers, which are formed by Schottky cross gates on Al0.3Ga0.7As/GaAs Hall bars. The gates sandwich the intermediate region adjusted to the ν = 1 integer quantum-Hall (IQH) state. Nonequilibrium population is noted to be created when ν = 2/3, 3/5, and 1/3 are realized in the regions underneath the gates, suggesting the formation of ν = 2/3, 3/5, and 1/3 fractional quantum-Hall (FQH) edge states in the bulk ν = 1 IQH-state. The unequally occupied FQH-edge states carry the current over a 5 μm distance without equilibration. We discuss the width of incompressible strips in FQH-states from the equilibration length in FQH-edge states.

Original languageEnglish
Pages (from-to)150-154
Number of pages5
JournalPhysica B: Condensed Matter
Volume298
Issue number1-4
DOIs
Publication statusPublished - 2001 Apr 1
Externally publishedYes

Keywords

  • Edge states
  • Fractional quantum Hall effect
  • Nonequilibrium population

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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