Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source

A. Hamano, Y. Takatsu, S. Ohno, H. Minamide, H. Ito, Y. Usuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The carrier density was determined from the reflectance measurement using one or two waves in the reflective spectra of semiconductors. The mapping of Si was carried out at the rate of 2 s per point. The tunable terahertz (THz) source was able to generate the THz-wave in the range from 2.5 to 30 THz [1,2].

Original languageEnglish
Title of host publication2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
DOIs
Publication statusPublished - 2011 Sep 6
Event2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany
Duration: 2011 May 222011 May 26

Publication series

Name2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

Other

Other2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
CountryGermany
CityMunich
Period11/5/2211/5/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source'. Together they form a unique fingerprint.

Cite this