NONDESTRUCTIVE MEASUREMENTS OF Si-SiO2 INTERFACE STRUCTURES STUDIED BY USING X-RAY EXCITED Si KLL AUGER ELECTRON SPECTRA.

Toshihisa Suzuki, Masaaki Muto, Motohiro Hara, Takeo Hattori, Kikuo Yamabe, Hiroshi Yamauchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Abstract

    The increase in the probing depth to nearly 20 nm is realized for silicon oxide by using X-ray excited Si KLL Auger electron spectra. The consistent analytical results with those obtained by using Mg K alpha radiation excited Si 2p photoelectron spectra were obtained. These consistent analytical results verify the assumption that in the thickness range studied, the distribution of the intermediate oxidation states in the oxide film is almost independent on the oxide film thickness. This assumption is also confirmed from the depth profiling studies by using chemical etching.

    Original languageEnglish
    Title of host publicationConference on Solid State Devices and Materials
    PublisherBusiness Cent for Academic Soc Japan
    Pages297-300
    Number of pages4
    ISBN (Print)4930813077, 9784930813077
    DOIs
    Publication statusPublished - 1984

    Publication series

    NameConference on Solid State Devices and Materials

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Suzuki, T., Muto, M., Hara, M., Hattori, T., Yamabe, K., & Yamauchi, H. (1984). NONDESTRUCTIVE MEASUREMENTS OF Si-SiO2 INTERFACE STRUCTURES STUDIED BY USING X-RAY EXCITED Si KLL AUGER ELECTRON SPECTRA. In Conference on Solid State Devices and Materials (pp. 297-300). (Conference on Solid State Devices and Materials). Business Cent for Academic Soc Japan. https://doi.org/10.7567/ssdm.1984.b-5-3