Nondestructive measurement of carrier density in GaAs using relative reflectivity of two terahertz waves

Akihide Hamano, Seigo Ohno, Hiroaki Minamide, Hiromasa Ito, Yoshiyuki Usuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A new nondestructive measurement using terahertz waves for determining the carrier density of GaAs is proposed. The reflectance around the longitudinal optical (LO) phonon frequency changes with carrier density, whereas the reflectance around the transverse optical (TO) phonon frequency is constant. The relative reflectance, which is evaluated from the reflectance at the two frequencies related to the TO and LO phonon, as a function of the carrier density of GaAs was calculated from the dielectric function. A broadband tunable terahertz source is convenient for producing two waves around these phonon frequencies. Measurement of n-type GaAs wafer using this new terahertz measurement is described.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
PublisherTrans Tech Publications Ltd
Pages109-112
Number of pages4
ISBN (Print)9783037854426
DOIs
Publication statusPublished - 2012
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: 2011 Sep 252011 Sep 29

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Country/TerritoryJapan
CityMiyazaki
Period11/9/2511/9/29

Keywords

  • Carrier density
  • GaAs
  • Nondestructive measurement
  • Terahertz

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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