Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy

H. Nohira; S. Shinagawa; M. Kase; T. Maruizumi; T. Hattori

doi:10.1109/EDSSC.2005.1635230

Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy

H. Nohira, S. Shinagawa, M. Kase, T. Maruizumi, T. Hattori

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The depth profiles of composition and chemical bonding configuration of nitrogen atoms were determined by applying maximum entropy concept to the angle-resolved photoelectron spectroscopy.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	155-160
Number of pages	6
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635230
Publication status	Published - 2005 Jan 1
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 2005 Dec 19 → 2005 Dec 21

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	05/12/19 → 05/12/21

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2005.1635230

Cite this

Nohira, H., Shinagawa, S., Kase, M., Maruizumi, T., & Hattori, T. (2005). Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 155-160). [1635230] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635230

Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy. / Nohira, H.; Shinagawa, S.; Kase, M. et al.

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 155-160 1635230 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nohira, H, Shinagawa, S, Kase, M, Maruizumi, T & Hattori, T 2005, Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635230, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 155-160, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05/12/19. https://doi.org/10.1109/EDSSC.2005.1635230

Nohira H, Shinagawa S, Kase M, Maruizumi T, Hattori T. Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 155-160. 1635230. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2005.1635230

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Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy

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