TY - GEN
T1 - Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy
AU - Nohira, H.
AU - Shinagawa, S.
AU - Kase, M.
AU - Maruizumi, T.
AU - Hattori, T.
PY - 2005/1/1
Y1 - 2005/1/1
N2 - Our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The depth profiles of composition and chemical bonding configuration of nitrogen atoms were determined by applying maximum entropy concept to the angle-resolved photoelectron spectroscopy.
AB - Our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The depth profiles of composition and chemical bonding configuration of nitrogen atoms were determined by applying maximum entropy concept to the angle-resolved photoelectron spectroscopy.
UR - http://www.scopus.com/inward/record.url?scp=43549106295&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43549106295&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2005.1635230
DO - 10.1109/EDSSC.2005.1635230
M3 - Conference contribution
AN - SCOPUS:43549106295
SN - 0780393392
SN - 9780780393394
T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
SP - 155
EP - 160
BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 19 December 2005 through 21 December 2005
ER -