Nondestructive depth profiling of gate insulators by angle-resolved photoelectron spectroscopy

H. Nohira, S. Shinagawa, M. Kase, T. Maruizumi, T. Hattori

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Our detailed study on the composition and the chemical structure of oxynitride films was reviewed. The structure of oxynitride/Si interface was determined from the nearest neighbors of a nitrogen atom and those of a silicon atom detected by X-ray photoelectron spectroscopy. The depth profiles of composition and chemical bonding configuration of nitrogen atoms were determined by applying maximum entropy concept to the angle-resolved photoelectron spectroscopy.

    Original languageEnglish
    Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages155-160
    Number of pages6
    ISBN (Print)0780393392, 9780780393394
    DOIs
    Publication statusPublished - 2005 Jan 1
    Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
    Duration: 2005 Dec 192005 Dec 21

    Publication series

    Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

    Other

    Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
    CountryHong Kong
    CityHowloon
    Period05/12/1905/12/21

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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