Abstract
A four point bending test was carried out on sintered α-type SiC speciments to examine the scattering of strength. On the other hand, nondestructive material characterization by means of impedance measurement of the specimen for a wide range of frequency of 5 Hz~100 kHz was performed. As a result, it was found that the complex plane plot of the impedance is composed of two semicircles. The diameter of the smaller semicircle (high-frequency side) was almost the same for all specimens, but that of the larger semicircle (low-frequency side) was different between bulk end specimens and bulk center specimens. This impedance variation from specimen to specimen agrees well with those of the bending strength. From the composition analysis of each specimen, it was found that the bending strength and the diameter of the low-frequency semicircle is affected by the content of free carbon assumed to exist at the grain boundaries. Possible evaluation of the material properties of SiC by impedance spectroscopy seems to be promising.
| Original language | English |
|---|---|
| Pages (from-to) | 940-945 |
| Number of pages | 6 |
| Journal | Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A |
| Volume | 61 |
| Issue number | 585 |
| DOIs | |
| Publication status | Published - 1995 |
| Externally published | Yes |
Keywords
- Bending
- Bending Strength
- Ceramic
- Impedance Spectroscopy
- Nondestructive Evaluation
- Reliability
- Silicon Carbide
- Sintering Aids
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
