Nondestructive and local evaluation of SiO2/SiC interface using super-higher-order scanning nonlinear dielectric microscopy

Norimichi Chinone, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

SiO2/SiC interface was investigated by using super-higher-order (SHO) scanning nonlinear dielectric microscopy (SNDM) with high spatial resolution. Comparison of non-oxidized and thermally oxidized 4H-SiC wafer (Si-face) revealed that only 5 min oxidation makes the interface quality spatially inhomogeneous. Next four SiC wafers treated under different post oxidation annealing (POA) conditions in NO ambient (three “with” and one “without” POA) were also compared. Using SHO-SNDM, local capacitance-voltage (C-V) curves were obtained. The local C-V curve obtained in sample with POA was more close to ideal C-V curve compared to the C-V curves obtained in the sample without POA. In addition, two-dimensional normalized SNDM images taken on the four SiC wafers were observed, which showed that the spatial deviation of interface state was reduced by the POA treatment. Moreover, standard deviations σ of the normalized SNDM images were calculated. Then, very strong correlations between σ and interface-state density Dit as well as channel electron mobility μFE were observed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages469-472
Number of pages4
ISBN (Print)9783035710427
DOIs
Publication statusPublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: 2015 Oct 42015 Oct 9

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period15/10/415/10/9

Keywords

  • Scanning nonlinear dielectric microscopy
  • SiO/SiC interface

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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